2sA2210 no. a0667-1/4 applications relay drivers, lamp drivers, motor drivers. features adoption of mbit processes. large current capacitance. low collector-to-emitter saturation voltage. high-speed switching. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo - -50 v collector-to-emitter voltage v ceo - -50 v emitter-to-base voltage v ebo -- 6 v collector current i c - -20 a collector current (pulse) i cp - -25 a base current i b -- 3 a collector dissipation p c 2w t c=25 c30w junction temperature tj 150 c storage temperature tstg - -55 to +150 c sanyo semiconductors d ata sheet tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0667 30707fa ti im tc-00000565 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 2sA2210 pnp epitaxial planar silicon transistor high-current switching applications www.datasheet.co.kr datasheet pdf - http://www..net/
2sA2210 no. a0667-2/4 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =--40v, i e =0a --10 a emitter cutoff current i ebo v eb =--4v, i c =0a --10 a dc current gain h fe v ce =--2v, i c =--1a 150 450 gain-bandwidth product f t v ce =--10v, i c =--1a 140 mhz output capacitance cob v cb =--10v, f=1mhz 215 pf collector-to-emitter saturation voltage v ce (sat) i c =--7a, i b =--350ma --200 --500 mv base-to-emitter saturation voltage v be (sat) i c =--7a, i b =--350ma --1.2 v collector-to-base breakdown voltage v (br)cbo i c =--100 a, i e =0a --50 v collector-to-emitter breakdown voltage v (br)ceo i c =--1ma, r be = - -50 v emitter-to-base breakdown voltage v (br)ebo i e =--100 a, i c =0a --6 v t urn-on time t on see specified test circuit. 60 ns storage time t stg see specified test circuit. 270 ns fall time t f see specified test circuit. 20 ns package dimensions switching time test circuit unit : mm (typ) 7508-002 i c -- v ce collector-to-emitter voltage, v ce -- v collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector current, i c -- a it12019 0--2 .0 -- 0 . 5 -- 1 .0 --1.5 0 -- 2 -- 1 4 -- 1 2 -- 1 0 -- 8 -- 6 -- 4 -- 1 6 -- 1 8 -- 2 0 it12020 0--1 .0 -- 0 . 8 -- 0 . 2 -- 0 .4 --0.6 0 -- 1 -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 8 -- 9 -- 1 0 i b =0ma i b =0ma -- 700 m a -- 400 m a -- 500 m a -- 600 m a -- 300 m a -- 200 m a -- 100 m a -- 800 m a -- 900 m a -- 500 m a -- 400 m a -- 300 m a -- 200 m a -- 120 m a -- 140 m a -- 160 m a -- 180 m a -- 80 m a -- 100 m a -- 60 m a -- 40 m a -- 1000 m a -- 20 m a v r r l v cc = --20v v be =5v i c =20i b1 = --20i b2 = --7a + + 50 ? input output r b 100 f 470 f pw=20 s i b1 i b2 d.c. 1% 10.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.2 2.4 1.6 1.2 0.7 0.75 2.55 2.55 123 1 : base 2 : collector 3 : emitter sanyo : to-220ml www.datasheet.co.kr datasheet pdf - http://www..net/
2sA2210 no. a0667-3/4 cob -- v cb v be (sat) -- i c v ce (sat) -- i c f t -- i c v ce (sat) -- i c h fe -- i c i c -- v be h fe -- i c collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe collector current, i c -- a gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v - -0.1 --1.0 23 57 2 - -10 357 2357 5 7 100 5 3 7 2 2 1000 - -0.1 - -0.01 7 5 3 27 5 3 27 55 3 2 - -1.0 --10 3 2 it12026 - -1.0 2 3 5 7 2 3 it12028 - -0.1 - -0.01 7 5 3 27 5 3 2 - -1.0 7 5 3 22 - -10 3 - -0.1 - -1.0 5 - -0.01 2 3 5 7 7 2 3 5 7 t a=75 c 25 c - -25 c t a= - -25 c 25 c 75 c i c / i b =20 i c / i b =20 t a= - -25 c 25 c 75 c it12024 - -0.01 --0.1 23 57 2 - -1.0 357 235 - -10 7 5 3 10 2 7 100 5 3 2 7 1000 v ce = --10v it12027 - -0.1 - -0.01 7 5 3 27 5 3 2 - -1.0 7 5 3 22 - -10 3 - -0.1 - -1.0 - -0.01 2 3 5 7 2 3 2 5 3 5 7 t a=75 c 25 c - -25 c i c / i b =50 it12022 2 3 5 7 2 100 1000 10 3 5 7 - -0.01 3 25 - -0.1 7235 - -1.0 --10 72 2 35 5 3 7 t a=75 c 25 c - -25 c v ce = --2v - -30 - -25 - -20 -- 5 - -15 - -10 0 0 it12021 - -0.2 --0.4 --0.6 --0.8 --1.0 --1.4 - -1.2 v ce = --2v 25 c - -25 c t a=75 c it12023 it12025 2 100 10 3 5 7 2 1000 3 5 7 - -0.01 3 25 - -0.1 73 257 3 257 - -1.0 --10 23 5 t a=25 c v ce = - -2.0 v - -0.7 v - -0.5 v - -0.2 v - -1.0 v f=1mhz ta= - -25 c 25 c 75 c www.datasheet.co.kr datasheet pdf - http://www..net/
2sA2210 no. a0667-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of march, 2007. specifications and information herein are subject to change without notice. it12030 it12029 it12031 2.5 0.5 0 20 0 1.0 1.5 2.0 40 60 80 100 120 140 160 35 25 30 5 0 160 20 0 40 60 80 10 15 20 100 120 140 - -0.01 2 3 5 7 2 - -0.1 3 5 7 2 - -1.0 - -0.1 23 57 23 57 - -1.0 23 57 - -10 i cp = --25a dc operation s / b limit 1ms 10ms p t = 500 s i c = --20a 100ms 3 5 7 2 - -10 3 5 p c -- ta collector dissipation, p c -- w ambient temperature, ta -- c collector current, i c -- a collector-to-emitter voltage, v ce -- v p c -- tc collector dissipation, p c -- w case temperature, tc -- c t c=25 c single pulse f orward bias a s o no heat sink www.datasheet.co.kr datasheet pdf - http://www..net/
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